Semiconductor-mediated Photocatalytic Degradation of Dye Wastewater by MoS2/T-CoP Composite Heterojunction
Semiconductor-mediated multiphase photocatalysis is now considered an effective method for wastewater treatment.Heterojunctions are considered to have better photocatalytic activity than monomers.In this work,MoS2/T-CoP heterojunctions were prepared by a simple hydrothermal method and investigated for photocatalytic degradation of rhodamine B in comparison with pristine MoS2 and T-CoP.X-ray diffraction(XRD)and scanning electron microscopy(SEM)confirmed the formation of a composite heterostructure between MoS2 and T-CoP.UV-vis diffuse reflectance spectroscopy(UV-vis DRS)and electrochemical Mott-Schottky experiments were used to study the band gaps of MoS2 and T-CoP.The conduction band edge of MoS2 MoS2/T-CoP exhibited excellent photocatalytic degradation efficiency of rhodamine B,reaching 71.01%within 1 h.The photocatalytic degradation efficiency of T-CoP was also investigated by UV-vis DRS.Free radical trapping experiments showed that h+was the main active substance for photocatalytic degradation.These results suggest that the addition of T-CoP on MoS2 can effectively enhance the photocatalytic ability of MoS2/T-CoP heterojunction,which is attributed to the matching energy band structure between MoS2 and T-CoP that promotes the interfacial charge transfer and inhibits the complexation of photogenerated electrons and holes at the interface.
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