Research of Doping Diamond with Non-metallic Elements by High Temperature and High Pressure
Diamond has a range of extreme properties that are superior to those of other materials and are used in a wide variety of applications.The functional properties of diamond are often determined by the impurity elements contained within it,including non-metallic elements such as boron(B),nitrogen(N),sulfur(S)and phosphorus(P).Doping these elements to synthesize diamond has become a hot spot of research at home and abroad.This paper firstly introduces the synthesis method of diamond single crystals under high temperature and high pressure conditions and its research status and development,and then analyzes the effects of doping of single elements such as boron(B),nitrogen(N),sulfur(S),and phosphorus(P)on the growth of diamond crystals and electrical properties.The applications of diamond in semiconductors and the nitrogen-containing color centers in diamond are also analyzed and summarized in detail.Finally,the prospects for the study of optical and electrical properties of doped diamond are envisioned,and it is pointed out that further exploration of the theoretical and experimental methods of multi-element co-doping is of great significance to enhance the properties of doped diamond.
diamondhigh temperature and high pressurenon-metallic element dopingsemiconductor materialsnitrogen-containing color centers
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