金属有机物化学气相沉积颗粒物污染及在线氯气清洗工艺研究
Metal-organic Chemical Vapor Deposition Particle Pollution and On-line Chlorine Gas Cleaning Process Research
杨超普 1方文卿 2李晓龙3
作者信息
- 1. 商洛学院,陕西 商洛 726000;中国科学院苏州纳米技术与纳米仿生研究所,江苏 苏州 215123
- 2. 南昌大学,江西 南昌 330047
- 3. 商洛学院,陕西 商洛 726000
- 折叠
摘要
近耦合喷淋MOCVD在硅衬底GaN基LED外延生长中优势显著.外延中反应室内颗粒物污染直接影响着晶体质量.通过自主设计加工全 316L不锈钢近耦合MOCVD喷头,在近耦合喷淋MOCVD上首次实现了在线氯气清洗并完成工艺优化.利用激光尘埃粒子计数器对硅衬底GaN基LED外延过程中,不同工艺、反应室不同位置颗粒物数量随时间变化、粒径分布进行研究.验证了近耦合喷淋MOCVD在线氯气清洗可行且效果良好.发现抹灰工艺会产生大量颗粒物,10 min颗粒物难以稳定.颗粒物污染主要来自加热器,且加热器处颗粒物粒径较大.该结果可为外延工艺优化及相关设备开发提供参考.
Abstract
Close coupled MOCVD has a significant advantage in the epitaxy growth of GaN based LED on silicon substrate.In the process of epitaxy,the particle pollution in the reactor directly affects the crystal quality.By independently designing and machining all 316L stainless steel close coupled MOCVD showerhead,on-line chlorine gas cleaning and process optimization were realized for the first time on the close coupled MOCVD spray system.In the epitaxy process of GaN basedLED on silicon substrate,the change of particle quantity and particle size distribution in different processes and different positions of reactor were studied by using laser dust particle counter.It is proved that the close coupled MOCVD on-line chlorine gas cleaning is feasible and effective.It is found that the plastering process will produce a large number of particles,and the particles in 10 minutes are difficult to stabilize.The particle pollution mainly comes from the heater,and the particle size at the heater is large.The results can provide reference for the optimization of process and the development of related equipment.
关键词
金属有机物化学气相沉积/外延生长/氯气清洗/颗粒物污染Key words
MOCVD/epitaxial growth/chlorine gas cleaning/particle pollution引用本文复制引用
基金项目
陕西省教育厅专项科研项目(20JK0615)
商洛学院重点培育项目(22KYPY03)
商洛学院博士启动基金(21SKY127)
出版年
2024
NETL
NSTL
万方数据