Metal-organic Chemical Vapor Deposition Particle Pollution and On-line Chlorine Gas Cleaning Process Research
Close coupled MOCVD has a significant advantage in the epitaxy growth of GaN based LED on silicon substrate.In the process of epitaxy,the particle pollution in the reactor directly affects the crystal quality.By independently designing and machining all 316L stainless steel close coupled MOCVD showerhead,on-line chlorine gas cleaning and process optimization were realized for the first time on the close coupled MOCVD spray system.In the epitaxy process of GaN basedLED on silicon substrate,the change of particle quantity and particle size distribution in different processes and different positions of reactor were studied by using laser dust particle counter.It is proved that the close coupled MOCVD on-line chlorine gas cleaning is feasible and effective.It is found that the plastering process will produce a large number of particles,and the particles in 10 minutes are difficult to stabilize.The particle pollution mainly comes from the heater,and the particle size at the heater is large.The results can provide reference for the optimization of process and the development of related equipment.
MOCVDepitaxial growthchlorine gas cleaningparticle pollution
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