Study on Photoelectric Properties of Zinc Oxide Co-doped Thin Films
In order to study the photoelectric properties of films prepared by different doped zinc oxide targets,AZO and AGZO targets were used to prepare film samples,and the homogeneity of AZO films prepared by different target base distances was studied.Meanwhile,the photoelectric properties of AZO and AGZO films under different sputtering process parameters were studied.Through comparative analysis of the properties of AZO and AGZO films,the influence and mechanism of improving the composition of the target material on the properties of the films were explored.The experimental results show that the thickness uniformity of the film is better when the target base distance is 9 cm.The square resistance of AZO and AGZO films prepared in pure argon is the lowest.In addition,both AZO and AGZO films exhibit good optical transmission properties in a wide region ranging from 300 nm to 1300 nm.At 200℃/0%O2,the resistivity of AZO and AGZO films is in the order of 10-3 Ω·cm and the carrier concentration is in the order of 1020 cm-3.The photoelectronic properties of the films prepared by AGZO(2.6 wt%Al2O3+Ga2O3)with the increase of the doping amount of Group III elements are better under the optimum process parameters.
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