首页|乙二醇对旋涂法制备WO3薄膜形貌结构和光电特性的影响

乙二醇对旋涂法制备WO3薄膜形貌结构和光电特性的影响

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三氧化钨(WO3)因其具有优异的可见光响应、光化学性能而成为研究者广泛研究的光催化材料。本文将偏钨酸铵水合物溶解于N,N-二甲基甲酰胺(DMF)、乙二醇和无水乙醇组成的有机溶剂中,形成前驱体溶液,通过旋涂法在FTO导电玻璃上制备得到了WO3薄膜,研究不同浓度乙二醇前驱体溶液制得的WO3薄膜的形貌结构和光电特性。采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、拉曼光谱对WO3薄膜的晶体结构和形貌进行表征测试;并借助紫外可见分光光度计和电化学工作站进行薄膜的光电特性测试。结果表明:添加乙二醇的前驱体溶液制备的WO3薄膜表面和厚度更加均匀平整,薄膜的晶体结构基本无影响、结晶度稍有下降;添加乙二醇后薄膜的光吸收增强,且带隙有所减小,光电流密度有了较高的提升,这可为低成本高效率制备WO3光催化材料提供一种方法。
Influence of Ethylene Glycol on the Morphology,Structure,and Photoelectrochemical Properties of WO3 Films Prepared by Spin-Coating Method
Tungsten trioxide(WO3)has been widely studied as a photocatalyst due to its excellent visible light response and photochemical properties.In this study,ammonium metatungstate hydrate was dissolved in an organic solvent composed of N,N-dimethylformamide(DMF),ethylene glycol,and anhydrous ethanol to form a precursor solution.WO3 films were prepared on FTO conductive glass by spin-coating method.The morphology,structure,and photoelectrochemical properties of WO3 films prepared from different precursor solution were investigated.The crystal structure and morphology of WO3 films were characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD),and Raman spectroscopy.The photoelectrochemical properties of the films were evaluated using UV-visible spectrophotometry and an electrochemical workstation.The results showed that the addition of ethylene glycol in the precursor solution resulted in more uniform and smoother surface and thickness of the WO3 films.The crystal structure of the films remained mostly unaffected,with a slight decrease in crystallinity.After the addition of EG,the optical absorption of the films is enhanced,and the bandgap is slightly reduced.Consequently,the photocurrent density is significantly increased,providing a method for the low-cost and efficient preparation of WO3 photocatalytic materials.

WO3filmethylene glycolspin-coatingphotocatalysis

顾伟霞、邵威威、张引

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金陵科技学院,江苏 南京 211169

WO3 薄膜 乙二醇 旋涂 光催化

2024

广东化工
广东省石油化工研究院

广东化工

影响因子:0.288
ISSN:1007-1865
年,卷(期):2024.51(21)