首页|Fast source mask co-optimization method for high-NA EUV lithography

Fast source mask co-optimization method for high-NA EUV lithography

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Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integ-rated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used ap-proach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is estab-lished first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this pa-per develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compress-ive-sensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography pat-terning error,and maintain high computational efficiency.

computational lithographyhigh-NA EUV lithographysource-mask co-optimizationlithography imaging model

Ziqi Li、Lisong Dong、Xu Ma、Yayi Wei

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EDA Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China

University of Chinese Academy of Sciences,Beijing 100049,China

Guangdong Greater Bay Area Applied Research Institute of Integrated Circuit and Systems,Guangzhou 510700,China

Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China,School of Optics and Photonics,Beijing Institute of Technology,Beijing 100081,China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaChinese Ministry of Science and TechnologyGuangdong Province Research and Development Program in Key FieldsYouth Innovation Promotion Association Chinese Academy of SciencesBeijing Institute of ElectronicsBeijing Association for Science and TechnologyUniversity of Chinese Academy of SciencesChina Fundamental Research Funds for the Central Universities

6227418162204257623740162019YFB22050052021B01012800022021115118900M032E2ET3801

2024

10.29026/oea.2024.230235

光电进展(英文版)

光电进展(英文版)

EI
ISSN：
年,卷(期)：2024.7(4)