首页|Highly enhanced UV absorption and light emission of monolayer WS2 through hybridization with Ti2N MXene quantum dots and g-C3N4 quantum dots

Highly enhanced UV absorption and light emission of monolayer WS2 through hybridization with Ti2N MXene quantum dots and g-C3N4 quantum dots

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Two-dimensional(2D)transition metal dichalcogenides(TMD)are atomically thin semiconductors with promising opto-electronic applications across the visible spectrum.However,their intrinsically weak light absorption and the low photolu-minescence quantum yield(PLQY)restrict their performance and potential use,especially in ultraviolet(UV)wavelength light ranges.Quantum dots(QD)derived from 2D materials(2D/QD)provide efficient light absorption and emission of which energy can be tuned for desirable light wavelength.In this study,we greatly enhanced the photon absorption and PLQY of monolayer(1L)tungsten disulfide(WS2)in the UV range via hybridization with 2D/QD,particularly titanium ni-tride MXene QD(Ti2N MQD)and graphitic carbon nitride QD(GCNQD).With the hybridization of MQD or GCNQD,1L-WS2 showed a maximum PL enhancement by 15 times with 300 nm wavelength excitation,while no noticeable enhance-ment was observed when the excitation photon energy was less than the bandgap of the QD,indicating that UV absorp-tion by the QD played a crucial role in enhancing the light emission of 1L-WS2 in our 0D/2D hybrid system.Our findings present a convenient method for enhancing the photo-response of 1L-WS2 to UV light and offer exciting possibilities for harvesting UV energy using 1L-TMD.

monolayer TMDWS22D-derived quantum dotsUV absorptionenergy transfer

Anir S.Sharbirin、Rebekah E.Kong、Wendy B.Mato、Trang Thu Tran、Eunji Lee、Jolene W.P.Khor、Afrizal L.Fadli、Jeongyong Kim

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Department of Energy Science,Sungkyunkwan University,Suwon 16419,Republic of Korea

National Research Foundation of Korea(NRF)funded by the Ministry of EducationNational Research Foundation of Korea(NRF)funded by the Ministry of Education

2021R1A6A1A030396962022R1A2C2009412

2024

10.29026/oea.2024.240029

光电进展(英文版)

光电进展(英文版)

EI
ISSN：
年,卷(期)：2024.7(6)