Preparation Process of Al and Ti Doped Tantalum Nitride Films by Magnetron Sputtering
In this study,Al-TaN and Ti-TaN films were successfully prepared on Al2O3 ceramic substrates using reactive RF magnetron sputtering through co-sputtering.The impacts of doping elements on the microstructure and electrical properties of the films were investigated by adjusting the sputtering power of Al and Ti targets.With the increase of Al and Ti doping,the surface roughness of TaN films gradually increases,and the crystalline structure transforms to amorphous.For Al doping,as the Al target sputtering power increases from 0 W to 70 W,the film resistivity increases from 0.88 mΩ·cm to 82.72 mΩ·cm.For Ti doping,as the Ti target sputtering power increases from 0 W to 70 W,the resistivity decreases from 1.03 mΩ·cm to 0.32 mΩ·cm.Additionally,the temperature coefficient of resistance(TCR)of the film gradually increases from-1 313×10-6℃-1 to-3 831×10-6℃-1.Similarly,when Ti target sputtering power increases from 0 W to 70 W,the TCR shifts from-1 322×10-6℃-1 to-404×10-6℃-1.This study provides a comprehensive theoretical and experimental foundation for sputtering-doped TaN film preparation.
TaNmagnetron sputteringaluminum dopingtitanium dopingmicrostructureelectrical propertiesfilmspreparation process
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维普
