Research Progress on Bismuth telluride Based Flexible Thermoelectric Devices
Flexible thermoelectric devices based on bismuth telluride are compact,lightweight,and capable of high-density array integration,aligning with the future trends of high performance,miniaturization and low power consumption in electronic information devices.These devices are deformable and bendable,making them suitable for complex geometric structures and surfaces with irregular curvature changes.They are ideal for micro-energy supply,rapid cooling in small spaces,and personal thermal management in fields such as the Internet of Things,wearable devices,and micro-electronic chips.This paper reviews the recent research progress and challenges of flexible thermoelectric devices based on bismuth telluride and discusses their future development directions.Flexible thermoelectric devices based on bismuth telluride can be categorized into three types:block,film and textile.Although current research has achieved promising results,these devices are generally still in the laboratory stage and not yet ready for large-scale commercial use.Future efforts should focus on improving their output power,wear comfort and aesthetics,service stability and life,and reducing manufacturing difficulty.Block-type devices can achieve output power levels of tens of microwatts per square centimeter,but their flexibility and wearing comfort are insufficient.To enhance their thermoelectric performance,strategies including improving the ZT value of the bismuth telluride-based thermoelectric materials,matching load resistance appropriately,selecting low thermal conductivity packaging materials,rand designing package components and thermoelectric arms in terms of size,shape,number,and connection mode.Additionally,developing packaging and connection materials with higher flexibility and self-healing capabilities could increase flexibility and wear comfort.Film-type devices typically have output power in the range 1×10-6-1×10-9 W∙cm-2,which can not meet the practical application requirements.Improving the preparation technology of bismuth telluride-based films and optimizing the process parameters can enhance their thermoelectric properties.Developing thermoelectric interface materials with better thermal stability,resistivity and thermal conductivity can reduce the interface heat loss due to contact thermal resistance,thereby increasing output power and conversion efficiency.Using substrate materials with greater flexibility and mechanical stability can also extend their service life.Textile-type devices offer better stretching,bending and shearing properties,which meet the comfort requirements for wearables.However,their thermoelectric performance is poor,with output power generally in the range 1×10-6-1×10-9 W∙cm-2,and their stability is inadequate.Improving the printing and dipping processes to enhance the homogeneity of the bismuth telluride-based thermoelectric materials on yarn surfaces and innovating the structure of thermoelectric yarn assemblies to better establish the temperature differences across the fabric thickness can improve their thermoelectric performance.
万方数据
维普
