光电子·激光2024,Vol.35Issue(5) :475-482.DOI:10.16136/j.joel.2024.05.0679

高功率1550 nm多结VCSEL的设计与仿真

Design and simulation of high power 1550 nm multi-junction VC-SEL

谭云飞 王伟
光电子·激光2024,Vol.35Issue(5) :475-482.DOI:10.16136/j.joel.2024.05.0679

高功率1550 nm多结VCSEL的设计与仿真

Design and simulation of high power 1550 nm multi-junction VC-SEL

谭云飞 1王伟2
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作者信息

  • 1. 南京信息工程大学电子与信息工程学院,江苏南京 210044
  • 2. 无锡学院电子信息工程学院,江苏无锡 214000
  • 折叠

摘要

在激光雷达应用场景下,高功率垂直腔面发射激光器(vertical cavity surface emitting laser,VCSEL)越来越受到关注.而在长波波段,1 550 nm器件一直存在输出功率不够理想,功率转化效率低等问题.目前,多结VCSEL是获得高功率、高功率转换效率(power con-versionefficiency,PCE)、高光功率密度、高斜率效率(slope efficiency,SE)的关键技术.本文将1 550 nm VCSEL与多结技术结合,旨在设计出高功率的1550 nm器件,最终成功设计并仿真了不同直径(15 µm、20 μm、30 µm、50 µm、100 μm)多结(1-4 结)1 550 nm 的 VCSEL 器件.通过对比不同参数器件的输出功率,发现器件的输出功率随结数和直径的增加而增大,最大功率能达到2217mW(4结100μmVCSEL).并且仿真结果表明30μmVCSEL的输出特性相对较好:单结结构的SE优于50µm和100 μm器件,为0.39 W/A;在多结结构中,30μm优于15μm和20μm的器件,分别为0.89 W/A(2结)、1.55 W/A(3结)、1.79 W/A(4结).最后研究分析了 30 µm VCSEL PCE和远场分布,发现SE随结数增加而显著增加,最高为3结的40.4%,驱动电流只有1 A,这是单结PCE的6.2倍;3结的输出功率也高达1 549 mW,而光束发散角单多结器件之间几乎没有差别,约为5°.以上结果为1 550 nm VC-SEL作为激光雷达系统和3D传感的光源应用提供了很好的器件研究基础.

Abstract

In the laser radar(Lidar)application scenarios,high power vertical cavity surface emitting laser(VCSEL)attractes more and more attention.However,in the long wavelength band,such as 1 550 nm lasers,there are problems such as unsatisfactory output power and low power conversion efficiency.At present,multi-junction VCSEL is the key technology to obtain high power,high power conversion effi-ciency(PCE),high optical power density and high slope efficiency(SE).This paper combines 1 550 nm VCSEL and multi-junction technology,which aims to design a high power 1550 nm device.Finally,1 550 nm multi-junction(1-4)VCSEL devices with different diameters(15 μm,20 μm,30 μm,50 μm,100μm)are successfully designed and simulated.By comparing the output power of devices with different parameters,it is found that the output power of devices increases with the junctions and diameter,and the maximum power can reach 2 217 mW(4 juctions,100 μm,VCSEL).And the results show that the output characteristics of 30 μm VCSEL are relatively good:the SE of single junction structure is better than that of 50 μm and 100 μm,is 0.39 W/A,the SE of multi-junction structure is better than those of 15 μm and 20 μm,is 0.89 W/A,is 1.55 W/A and 1.79 W/A respectively.Finally,the PCE and far field distribution of 30 μm VCSEL are analyzed,the paper found that PCE significantly increases with the in-crease of junctions,up to 40.4%of three junctions,only 1 A driving current,this is 6.2 times the PCE of single junction device.The power output of three junctions VCSEL is up to 1 549 mW,and there is al-most no difference in beam divergence between single junction and multi-junction devices,is about 5°.These results provide a good device research basis for the application of 1 550 nm VCSEL as Lidar sys-tem and 3D sensing.

关键词

垂直腔面发射激光器(VCSEL)/多结/激光雷达(Lidar)/1/550/nm

Key words

vertical cavity surface emitting laser(VCSEL)/multi-junction/laser radar(Lidar)/1 550 nm

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基金项目

南京信息工程大学滨江学院人才启动科研项目(2019r005)

南京信息工程大学滨江学院人才启动科研项目(550219005)

江南大学横向项目(2021320205000041)

出版年

2024
光电子·激光
天津理工大学 中国光学学会

光电子·激光

CSCD北大核心
影响因子:1.437
ISSN:1005-0086
参考文献量17
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