高能N等离子源辅助GaN薄膜生长及其物性研究
Studies on the growth and physical properties of GaN thin films assisted by high-energy N plasma sources
胡海争 1贺怀乐 1赖黎 1王顺利 1吴超 1郭道友1
作者信息
- 1. 浙江理工大学理学院,浙江杭州 310018
- 折叠
摘要
氮化镓(GaN)具有宽带隙、高量子效率、优异的热稳定和抗辐射等特性,在高频、高功率电子及紫外光电器件中有着重要的作用.在本工作中,采用经济、环保的等离子增强化学气相沉积(plasma-enhanced chemical vapor deposition,PECVD)方法,通过使用高能 N 等离子体作为 N 源,在较低温度(850 ℃)下成功制备了高结晶质量的GaN薄膜,并研究了 N2流量对薄膜结晶质量、生长速率和光学性能的影响.结果表明,随着N2流量的增加,反应原子的动能提高,薄膜生长速度和结晶质量得以提升.但随着N2流量进一步增加,过高的成核率会导致衬底吸附的原子无法迁移到适当的位置,薄膜沿着不同的方向上随机生长,晶体质量下降.本文制备的GaN薄膜的载流子浓度达到2.19×1018 cm-3,迁移率达到5.17 cm2·V-1·s-1,在光电子器件中展现出较强的应用潜力.
Abstract
GaN with a wide band gap,high quantum efficiency,excellent thermal stability,and radiation resistance is important role in high frequency,high power electronics,and UV photoelectron devices.In this study,we present a novel approach by utilizing high-energy N plasma as the N source for synthesizing the GaN films with higher crystalline quality.This process occurs at a relatively low temperature of 850 ℃,utilizing the economical and eco-friendly plasma-enhanced chemical vapor deposition(PECVD)method.Furthermore,the effects of N2 flux on the crystalline quality of the films,growth rate and optical characteristics are investigated.The results reveal that an increase in N2 flux enhances both the film growth rate and crystalline quality by boosting the kinetic energy of reacting atoms.Nevertheless,a further increase in N2 flux results in excessive nucleation rate,preventing atoms adsorbed on the substrate from migrating to appropriate positions.Consequently,the films grow in random directions,leading to a decline in crystalline quality.The GaN films prepared in this study achieve a carrier concentration of 2.19 × 1018 cm-3 and mobility of 5.17 cm2·V-1·s-1,demonstrating significant potential for optoelectronic device applications.
关键词
等离子增强化学气相沉积(PECVD)/GaN薄膜/低温沉积/N等离子体Key words
plasma-enhanced chemical vapor deposition(PECVD)/GaN film/low-temperature deposition/N plasma引用本文复制引用
基金项目
国家自然科学基金(62274148)
浙江省教育厅一般项目(23060158-F)
出版年
2024
NETL
NSTL
万方数据