Preparation and characterization of In0.82Ga0.18As PIN photodetectors

LIU Xia ¹CAO Lian-zhen ¹LU Huai-xin ²LI Ying-de ²SONG Hang ³JIANG Hong³

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作者信息

1. Shandong Provincial Key Laboratory of Multi-photon Entanglement and Manipulation, Department of Physics and Optoelectronic Engineering, Weifang University, Weifang 261061, China;Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2. Shandong Provincial Key Laboratory of Multi-photon Entanglement and Manipulation, Department of Physics and Optoelectronic Engineering, Weifang University, Weifang 261061, China
3. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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Abstract

Using two-step growth method and buffer layer annealing treatment, the double heterojunction structures of In0.82Ga0.18As epilayer capped with InAs0.6P0.4 layer were prepared on InP substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD).Based on the high quality In0.82Ga0.18As structures, the In0.82Ga0.18As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology, and the device performance was investigated in detail.The typical dark current at the reverse bias VR=10 mV and the resistance area product R0A are 5.02 μA and 0.29 Ω·cm2 at 296 K and 5.98 nA and 405.2 Ω·cm2 at 116 K, respectively.The calculated peak detectivities of the In0.82Ga0.18As photodetector are 1.21 × 1010 cm·Hz1/2/W at 296 K and 4.39× 1011 cm·Hz1/2/W at 116 K respectively, where the quantum efficiency η=0.7 at peak wavelength is supposed.The results show that the detection performance of In0.82Ga0.18As prepared by two-step growth method can be improved greatly.

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基金项目

This work has been supported by the National Natural Science Foundation of China(11174224)

This work has been supported by the National Natural Science Foundation of China(11404246)

Natural Science Foundation of Shandong Province(BS2015DX015)

Natural Science Foundation of Shandong Province(ZR2013FM001)

Science and Technology Development Program of Shandong Province(2013YD01016)

and the Higher School Science and Technology Program of Shandong Province(J13LJ54)

and the Higher School Science and Technology Program of Shandong Province(J15LJ54)

出版年

2016

光电子快报(英文版)

天津理工大学

光电子快报(英文版)

影响因子：0.641

ISSN：1673-1905

参考文献量17

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