首页|Single silicon waveguide MRR based Fano resonance in the whole spectral bands

Single silicon waveguide MRR based Fano resonance in the whole spectral bands

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To improve the integration of Fano devices,we design a T-shaped waveguide coupling micro-ring resonator(MRR)structure to achieve a single cavity with Fano resonance in the whole spectral bands.The mathematical relationship between the phase factor,the coupling coefficient of the bus waveguide,and the Fano resonance slope extinction ratio(ER)is established.The electron beam exposure process is used to obtain a device with an insertion loss of-3 dB.The maximum ER of the Fano lineshape exceeds 15 dB,and the slope ratio(SR)is 251.3 dB/nm.This design improves the compactness of the Fano resonant device.

LU Lidan、WANG Shuai、ZENG Zhoumo、DONG Mingli、ZHU Lianqing

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School of Instrument Science and Opto Electronics Engineering,Beijing Information Science and Technology Uni-versity,Beijing 100016,China

Department of Precision Instrument Engineering,Tianjin University,Tianjin 300072,China

State Grid Zhejiang Electric Power Corporation Information Telecommunication Branch高等学校学科创新引智计划(111计划)国家自然科学基金北京市自然科学基金

B311XT21004GD17021619030424214081

2022

光电子快报(英文版)
天津理工大学

光电子快报(英文版)

EI
影响因子:0.641
ISSN:1673-1905
年,卷(期):2022.18(7)
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