首页|Ultra-low dark count InGaAs/lnP single photon ava-lanche diode
Ultra-low dark count InGaAs/lnP single photon ava-lanche diode
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A low noise InGaAs/InP single photon avalanche diode(SPAD)is demonstrated.The device is based on planar type separate absorption,grading,charge and multiplication structure.Relying on reasonably designed device structure and low-damage Zn diffusion technology,excellent low-noise performance is achieved.Due to its importance,the physical mechanism of dark count is analyzed through performance characterization at different temperatures.The device can achieve 20％single photon detection efficiency and 320 Hz dark count rate(DCR)with a low after pulsing probability of 0.57％at 233 K.
LI Bin、NIU Yuxiu、FENG Yinde、CHEN Xiaomei
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Accelink Technologies Co.,Ltd.,Wuhan 430000,China
Major Scientific and Technological Innovation Projects in Hubei Province
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