首页|Research on the properties of ZnO1-xSx thin films modi-fied by sulfur doping for CIGS solar cells
Research on the properties of ZnO1-xSx thin films modi-fied by sulfur doping for CIGS solar cells
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ZnO1-xSx thin films modified by sulfur doping were prepared on glass substrates by chemical bath deposition(CBD)for studying the effect of thiourea concentration on the thin film properties.The obtained ZnO1-xSx thin films were charac-terized by scanning electron microscopy(SEM),which shows the surfaces of ZnO1-xSx thin films deposited under the thiourea concentration of 0.14 M are more compact.X-ray diffraction(XRD)measurement shows that the ZnO1-xSx thin films with hexagonal crystal structure had strong diffraction peaks and better crystallinity.The optical transmittance of the ZnO1-xSx thin films with 0.14 M thiourea concentration is above 80％in the wavelength range of 300-900 nm.According to the measurement results from spectrophotometer,the ZnO1-xSx band gap energy value Eg varies nonline-arly with different S/(S+O)ratio x,and increases with the increase of x.There is a band gap value of 2.97 eV in the ZnO1-xSx thin films deposited under 0.14 M thiourea concentration.Therefore,the thin films have better structural,op-tical and electric properties,and are more suitable for the buffer layers of copper indium gallium selenide(CIGS)thin film solar cells.
SUN Hang、XUE Yuming、WANG Luoxin、GUO Qing、LI Penghai
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School of Integrated Circuit Science and Engineering,Tianjin University of Technology,Tianjin 300384,China
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