首页|Theoretical analysis on GaAs sub-cell doping concen-tration for triple-junction solar cells irradiated by proton based on TCAD simulation
Theoretical analysis on GaAs sub-cell doping concen-tration for triple-junction solar cells irradiated by proton based on TCAD simulation
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NETL
NSTL
万方数据
The degradation on the GaInP/GaAs/Ge triple-junction solar cells was irradiated by proton,and the solar cells with various GaAs sub-cell doping concentrations are modeled by the technology computer aided design(TCAD)simula-tion.The degradation results of related electrical parameters and external quantum efficiency(EQE)are studied.The degradation mechanism irradiated by proton is discussed.The short-circuit current,maximum power and conversion efficiency decrease with the increasing of GaAs sub-cell doping concentration.When the base doping concentration of GaAs sub-cell is 1×1016 cm-3,the degradation of short-circuit current is less than that of other base doping concentra-tions.Furthermore,under proton irradiation,with the increase of doping concentration of GaAs sub-cell,the open-circuit voltage first increases and then decreases.Meanwhile,when the base doping concentration of GaAs sub-cell is 2×1017 cm-3,the degradation of open-circuit voltage is less than that of other base doping concentrations.The research will provide the basic theories and device simulation method for GaInP/GaAs/Ge triple-junction solar cells radiation damage evaluation study and radiation hardening,and can provide guidance for the production of tri-ple-junction solar cells in orbit.
LI Junwei、JIA Weimin、SHI Chengying、WANG Zujun、LI Zhengcao
展开 >
Key Lab of Advanced Materials(MOE),School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China
Xi'an Research Institute of High-Technology,Xi'an 710025,China
Northwest Institute of Nuclear Technology,Xi'an 710024,China
NETL
NSTL
万方数据
