首页|构建2D/3D致密的声子传输网络协同提高微波基板的导热性能

构建2D/3D致密的声子传输网络协同提高微波基板的导热性能

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随着"5G"时代的到来和信息技术革命的深入,电子元器件正朝着高集成化、小型化、高功率化和高性能化方向发展,要求器件具有更好的散热性.文中将具有高导热性能的六方氮化硼(h-BN)作为2D陶瓷填料,并与3D形貌的SiO2协同引入到聚四氟乙烯(PTFE)基微波基板中,二者相互搭接,成功构建了致密的声子传输网络,相较于单一填料,极大地提高了介质层的热导率(由0.6 W/(m·K)提升到1.196 W/(m·K),提高了 99.33%).与此同时,微波基板仍然保持了 PTFE介质层较低的介质损耗、合适的介电常数和较高的剥离强度.当h-BN添加量达到26%时,介质层的热导率达到了 1.196 W/(m·K),介质损耗因子为0.0008,剥离强度为1.072 N/mm.为新型高导热基板介质层的开发提出了一种通过构建2D/3D协同致密声子网络,进而提高基板导热性能的思路.
Improvement of the Thermal Conductivity of Microwave Substrate by Constructing a 2D/3D Dense Phonon Transmission Network
With the advent of"5G"and deepening of the information technology revolution,electronic components are developing in the direction of high integration,miniaturization,high power and high performance,requiring devices to have better heat dissipation.In this study,hexagonal boron nitride(h-BN)with high thermal conductivity was used as 2D ceramic filler,and was introduced into the polytetrafluoroethylene(PTFE)-based microwave substrate in collaboration with 3D-like SiO2.The two components were bonded to each other,and successfully constructed a dense phonon transport network.The thermal conductivity of the dielectric layer is greatly improved(from 0.6 W/(m·K)to 1.196 W/(m·K),an increase of 99.33%).In this process,the use of advanced calendering process,through the mixed flocculation-drying-grinding-mixing-preforming-calendering process,can improve the uniformity of the medium layer,to avoid the use of glass fiber cloth brought about by the"glass fiber braid effect".At the same time,the microwave substrate maintains the low dielectric loss,suitable dielectric constant and high stripping strength of PTFE dielectric layer.When the h-BN addition reaches 26%,the thermal conductivity of the dielectric layer reaches 1.196 W/(m·K),the dielectric loss factor is 0.0008675,and the stripping strength is 1.072 N/mm.In this paper,a new idea of 2D/3D collaborative construction of dense phonon network was proposed for the development of a new dielectric layer of high thermal conductivity substrate to improve the thermal conductivity of microwave substrate.

polytetrafluoroethylenehexagonal boron nitridemicrowave substratephonon transport networksynergistic effect

张立欣、王维文、沈杰、韩伏龙、金霞、郑胜杰

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武汉理工大学材料科学与工程学院,湖北武汉 430070

中国电子科技集团公司第四十六研究所,天津 300220

阜阳师范大学物理与电子工程学院,安徽阜阳 236031

湖北隆中实验室,湖北襄阳 441022

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聚四氟乙烯 六方氮化硼 微波基板 声子传输网络 协同作用

2024

高分子材料科学与工程
中国石油化工股份有限公司科技开发部 国家自然科学基金委员会化学科学部 高分子材料工程国家重点实验室 四川大学高分子研究所

高分子材料科学与工程

CSTPCD北大核心
影响因子:0.563
ISSN:1000-7555
年,卷(期):2024.40(10)