Polyhedral oligomeric silsesquioxane(POSS)is a class of organic-inorganic hybrid polymer materials with a unique structure.They are widely applied in the field of photoresist due to their excellent transparency,mechanical properties,low dielectric,thermostability,solvent resistance and etching resistance.In according to the development of lithography technology,the use of POSS resin as visible light,near/ultraviolet,deep ultraviolet and extreme ultraviolet/electron beam and so on is reviewed;the influence of internal inorganic structure and external organic chain segments of POSS on their application performance in photolithography technology across various wavelengths is summed up;the problems of POSS based photoresist are analyzed and their application prospect is discussed in the end.
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