首页|Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

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The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers,which has been experimentally reported in the MnBi2Te4 thin films under perpendicular electric fields.Here,we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature,as well as material design principles.Hence,it gives rise to zero Berry curvature in momentum space but non-zero layer-locked hidden Berry curvature in real space.We show that,compared to that of a trivial insulator,the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators.Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries,and can be generalized in various scenarios.

layer Hall effecthidden Berry curvatureantiferromagnetic insulatoraxion insulatorquantum transport

Rui Chen、Hai-Peng Sun、Mingqiang Gu、Chun-Bo Hua、Qihang Liu、Hai-Zhou Lu、X.C.Xie

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Shenzhen Institute for Quantum Science and Engineering and Department of Physics,Southern University of Science and Technology(SUSTech),Shenzhen 518055,China

International Quantum Academy,Shenzhen 518048,China

Institute for Theoretical Physics and Astrophysics,University of Wurzburg,Wurzburg 97074,Germany

School of Electronic and Information Engineering,Hubei University of Science and Technology,Xianning 437100,China

Guangdong Provincial Key Laboratory of Computational Science and Material Design,Southern University of Science and Technology,Shenzhen 518055,China

Shenzhen Key Laboratory of Quantum Science and Engineering,Shenzhen 518055,China

International Center for Quantum Materials,School of Physics,Peking University,Beijing 100871,China

Collaborative Innovation Center of Quantum Matter,Beijing 100871,China

CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China

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National Key R&D Program of ChinaNational Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Basic Research Program of ChinaStrategic Priority Research Program of the Chinese Academy of SciencesBasic Science Center Project of National Natural Science Foundation of ChinaGuangdong College Innovation TeamGuangdong College Innovation TeamShenzhen Highlevel Special FundShenzhen Highlevel Special FundGuangdong Provincial Key Laboratory for Computational science and Material DesignScience,Technology and Innovation Commission of Shenzhen MunicipalityScience,Technology and Innovation Commission of Shenzhen MunicipalityScience,Technology and Innovation Commission of Shenzhen MunicipalityChina Postdoctoral Science FoundationSUSTech Presidential Postdoctoral FellowshipNatural science Foundation of Guangdong ProvinceScience Technology and Innovation Commission of Shenzhen MunicipalityFoundation for Distinguished Young Talents in Higher Education of Guangdong Province

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2024

10.1093/nsr/nwac140

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ISSN：
年,卷(期)：2024.11(2)
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