首页|Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

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The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to the high-temperature quantum anomalous Hall(QAH)effect as well as various novel topological quantum phases.Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes,it remains a big challenge to achieve molecular beam epitaxy(MBE)-grown MnBi2Te4 thin films even close to the quantized regime.In this work,we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in situ oxygen exposure and top gating.We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity,but also increases the residual longitudinal resistivity,indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers.These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.

intrinsic magnetic topological insulatorquantized anomalous Hall resistivitymolecular beam epitaxyquantized transport property

Yunhe Bai、Yuanzhao Li、Jianli Luan、Ruixuan Liu、Wenyu Song、Yang Chen、Peng-Fei Ji、Qinghua Zhang、Fanqi Meng、Bingbing Tong、Lin Li、Yuying Jiang、Zongwei Gao、Lin Gu、Jinsong Zhang、Yayu Wang、Qi-Kun Xue、Ke He、Yang Feng、Xiao Feng

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State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China

Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China

Beijing Academy of Quantum Information Sciences,Beijing 100193,China

Frontier Science Center for Quantum Information,Beijing 100084,China

Hefei National Laboratory,Hefei 230088,China

Southern University of Science and Technology,Shenzhen 518055,China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaInnovation Program for Quantum Science and Technology

92065206119040532018YFA03071002017YFA03033032021ZD0302502

2024

10.1093/nsr/nwad189

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ISSN：
年,卷(期)：2024.11(2)
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