首页|Progress on the antiferromagnetic topological insulator MnBi2Te4

Progress on the antiferromagnetic topological insulator MnBi2Te4

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Topological materials,which feature robust surface and/or edge states,have now been a research focus in condensed matter physics.They represent a new class of materials exhibiting nontrivial topological phases,and provide a platform for exploring exotic transport phenomena,such as the quantum anomalous Hall effect and the quantum spin Hall effect.Recently,magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic orders.In particular,the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order.MnBi2Te4,as the first intrinsic antiferromagnetic topological insulator discovered,allows the examination of existing theoretical predictions;it has been extensively studied,and many new discoveries have been made.Here we review the progress made on MnBi2Te4 from both experimental and theoretical aspects.The bulk crystal and magnetic structures are surveyed first,followed by a review of theoretical calculations and experimental probes on the band structure and surface states,and a discussion of various exotic phases that can be realized in MnBi2Te4.The properties of MnBi2Te4 thin films and the corresponding transport studies are then reviewed,with an emphasis on the edge state transport.Possible future research directions in this field are also discussed.

MnBi2Te4magnetic topological insulatorantiferromagneticquantum anomalous Hall effectaxion insulator

Shuai Li、Tianyu Liu、Chang Liu、Yayu Wang、Hai-Zhou Lu、X.C.Xie

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Department of Physics,Harbin Institute of Technology,Harbin 150001,China

Shenzhen Institute for Quantum Science and Engineering and Department of Physics,Southern University of Science and Technology(SUSTech),Shenzhen 518055,China

Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong),Shenzhen 518045,China

Shenzhen Key Laboratory of Quantum Science and Engineering,Shenzhen 518055,China

International Quantum Academy,Shenzhen 518048,China

Beijing Academy of Quantum Information Sciences,Beijing 100193,China

Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices,Department of Physics,Renmin University of China,Beijing 100872,China

State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China

Frontier Science Center for Quantum Information,Beijing 100084,China

Hefei National Laboratory,Hefei 230088,China

International Center for Quantum Materials,School of Physics,Peking University,Beijing 100871,China

Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China

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National Key R&D Program of ChinaNational Natural Science Foundation of ChinaStrategic Priority Research Program of the Chinese Academy of SciencesInnovation Program for Quantum Science and TechnologyInnovation Program for Quantum Science and TechnologyGuangdong ProvinceGuangdong ProvinceScience,Technology and Innovation Commission of Shenzhen MunicipalityScience,Technology and Innovation Commission of Shenzhen MunicipalityScience,Technology and Innovation Commission of Shenzhen MunicipalityCenter for Computational Science and Engineering of SUSTech

2022YFA140370011925402XDB280000002021ZD03024002021ZD03025022016ZT06D3482020KCXTD001ZDSYS20170303165926217JCYJ20170412152620376KYTDPT20181011104202253

2024

国家科学评论(英文版)

国家科学评论(英文版)

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ISSN:
年,卷(期):2024.11(2)
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