首页|On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family

On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family

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We review recent progress in the electronic structure study of intrinsic magnetic topological insulators(MnBi2Te4).(Bi2Te3)n(n=0,1,2,3)family.Specifically,we focus on the ubiquitously(nearly)gapless behavior of the topological Dirac surface state observed by photoemission spectroscopy,even though a large Dirac gap is expected because of surface ferromagnetic order.The dichotomy between experiment and theory concerning this gap behavior is perhaps the most critical and puzzling question in this frontier.We discuss various proposals accounting for the lack of magnetic effect on the topological Dirac surface state,which are mainly categorized into two pictures,magnetic reconfiguration and topological surface state redistribution.Band engineering towards opening a magnetic gap of topological surface states provides great opportunities to realize quantized topological transport and axion electrodynamics at higher temperatures.

intrinsic magnetic topological insulatortopological surface statesmagnetic gapmagnetic reconfigurationtopological surface state redistributionvan der Waals spacing expansion

Yuan Wang、Xiao-Ming Ma、Zhanyang Hao、Yongqing Cai、Hongtao Rong、Fayuan Zhang、Weizhao Chen、Chengcheng Zhang、Junhao Lin、Yue Zhao、Chang Liu、Qihang Liu、Chaoyu Chen

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Shenzhen Institute for Quantum Science and Engineering(SIQSE)and Department of Physics,Southern University of Science and Technology(SUSTech),Shenzhen 518055,China

National Key R&D Program of ChinaNational Key R&D Program of ChinaNational Natural Science Foundation of China(NSFC)National Natural Science Foundation of China(NSFC)National Natural Science Foundation of China(NSFC)Guangdong Basic and Applied Basic Research FoundationGuangdong Basic and Applied Basic Research FoundationGuangdong Basic and Applied Basic Research FoundationGuangdong Innovative and Entrepreneurial Research Team ProgramShenzhen Science and Technology Programassistance of SUSTech Core

2022YFA14037002020YFA03089001207416312074161115041592022B15150200462022B15151300052021B15151300072019ZT08C044KQTD20190929173815000

2024

10.1093/nsr/nwad066

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ISSN：
年,卷(期)：2024.11(2)
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