首页|Graphene binding on black phosphorus enables high on/off ratios and mobility

Graphene binding on black phosphorus enables high on/off ratios and mobility

扫码查看
原文链接
  • NETL
  • NSTL
  • 万方数据
Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects,inherent high carrier mobility and desired gapless nature for Ohmic contact,but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility,limiting its device applications.Here,we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer.By local current annealing,strain is introduced within an established area of the graphene,which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion.Applying a positive back-gate voltage to the heterostructure can keep the black phosphorus insulating,while a negative back-gate voltage changes the black phosphorus to be conductive because of hole accumulation.Then,a parallel channel is activated within the strain-free graphene area by edge-contacted electrodes,thereby largely inheriting the intrinsic carrier mobility of graphene in the on-state.As a result,the device can provide an on/off voltage ratio of＞103 as well as a mobility of～8000 cm2 V-1 s-1 at room temperature,meeting the low-power criterion suggested by the International Roadmap for Devices and Systems.

grapheneon/off ratiomobilityblack phosphorusreflective interface

Fanrong Lin、Zhonghan Cao、Feiping Xiao、Jiawei Liu、Jiabin Qiao、Minmin Xue、Zhili Hu、Ying Liu、Huan Lu、Zhuhua Zhang、Jens Martin、Qingjun Tong、Wanlin Guo、Yanpeng Liu

展开 >

Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education,State Key Laboratory of Mechanicsand Control of Mechanical Structures,and Institute for Frontier Science,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China

Centre for Advanced 2D Materials,National University of Singapore,Singapore 117546,Singapore

School of Physics and Electronics,Hunan University,Changsha 410082,China

Centre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement,School of Physics,Beijing Institute of Technology,Beijing 100081,China

Leibniz Institute für Kristallzuchtung,Berlin 12489,Germany

展开 >

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Jiangsu ProvinceNatural Science Foundation of Jiangsu ProvinceNational Key Research and Development Program of ChinaNational Key Research and Development Program of Ministry of Science and Technology of ChinaFundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central UniversitiesScience Fund for Distinguished Young Scholars of Hunan ProvinceProgram for Innovative Talents and Entrepreneur in Jiangsu,Research Fund of State Key Laboratory of Mechanics and Control ofPriority Academic Program Development of Jiangsu Higher Education Institutions and the Postdoctoral science Foundation of Ji

121042281237211112304106BK20210312BK202120082019YFA07054002021YFA1200503NE2023006NC2023001NJ2023002NJ20220022022JJ10002MCMS-I-0422K01YBA21046

2024

10.1093/nsr/nwad279

国家科学评论(英文版)

国家科学评论(英文版)

CSTPCD
ISSN：
年,卷(期)：2024.11(2)
  • 51