首页|Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2

Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2

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Two-dimensional materials represent a major frontier for research into exotic many-body quantum phenomena.In the extreme two-dimensional limit,electron-electron interaction often dominates over other electronic energy scales,leading to strongly correlated effects such as quantum spin liquid and unconventional superconductivity.The dominance is conventionally attributed to the lack of electron screening in the third dimension.Here,we discover an intriguing metal to Mott insulator transition in1T-TaSe2 that defies conventional wisdom.Specifically,we find that dimensionality crossover,instead of reduced screening,drives the transition in atomically thin 1T-TaSe2.A dispersive band crossing the Fermi level is found to be responsible for the bulk metallicity in the material.Reducing the dimensionality,however,effectively quenches the kinetic energy of these initially itinerant electrons,and drives the material into a Mott insulating state.The dimensionality-driven metal to Mott insulator transition resolves the long-standing dichotomy between metallic bulk and insulating surface of 1 T-TaSe2.Our work further reveals a new pathway for modulating two-dimensional materials that enables exploring strongly correlated systems across uncharted parameter space.

two-dimensional materials1T-TaSe2dimensionality crossovermetal to Mott insulator transition

Ning Tian、Zhe Huang、Bo Gyu Jang、Shuaifei Guo、Ya-Jun Yan、Jingjing Gao、Yijun Yu、Jinwoong Hwang、Cenyao Tang、Meixiao Wang、Xuan Luo、Yu Ping Sun、Zhongkai Liu、Dong-Lai Feng、Xianhui Chen、Sung-Kwan Mo、Minjae Kim、Young-Woo Son、Dawei Shen、Wei Ruan、Yuanbo Zhang

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State Key Laboratory of Surface Physics,New Cornerstone Science Laboratory,and Department of Physics,Fudan University,Shanghai 200438,China

Shanghai Qi Zhi Institute,Shanghai 200232,China

Shanghai Research Center for Quantum Sciences,Shanghai 201315,China

Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China

Zhangjiang Fudan International Innovation Center,Fudan University,Shanghai 201210,China

State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology(SIMIT),Chinese Academy of Sciences,Shanghai 200050,China

School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China

Korea Institute for Advanced Study,Seoul 02455,South Korea

School of Emerging Technology and Department of Physics,University of Science and Technology of China,Hefei 230026,China

Advanced Light Source,Lawrence Berkeley National Laboratory,Berkeley,CA 94720,USA

ShanghaiTech Laboratory for Topological Physics,Shanghai 200031,China

Key Laboratory of Materials Physics,Institute of Solid State Physics,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China

High Magnetic Field Laboratory,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China

Collaborative Innovation Centre of Advanced Microstructures,Nanjing University,Nanjing 210093,China

Department of Physics,University of Science and Technology of China,and Key Laboratory of Strongly Coupled Quantum Matter Physics,Chinese Academy of Sciences,Hefei 230026,China

National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China

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国家重点研发计划中国科学院战略规划重点项目上海市科委项目国家自然科学基金Shanghai Science and Technology Development Funds国家自然科学基金ME2 project from National Natural science Foundation of ChinaNational Research Foundation of Korea(SRC program:vdWMRC center)Korea Institute of Advanced Study(KIAS)individual GrantKIAS individual GrantsKIAS individual Grants国家自然科学基金Double First-Class Initiative Fund of ShanghaiTech UniversityOffice of Basic Energy SciencesUS Department of Energy国家重点研发计划国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金

2018YFA0305600XDB300000002019SHZDZX011227408722QA1400600U2032208112279022017R1ASA1014862cG031509CG083501QP08130112274298DE-AC02-05CH112312021YFA1600201116743261187435712274412U1832141U1932217U2032215

2024

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年,卷(期):2024.11(3)
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