首页|Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells
Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells
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Enhancing the quality of junctions is crucial for optimizing carrier extraction and suppressing recombination in semiconductor devices.In recent years,metal halide perovskite has emerged as the most promising next-generation material for optoelectronic devices.However,the construction of high-quality perovskite junctions,as well as characterization and understanding of their carrier polarity and density,remains a challenge.In this study,using combined electrical and spectroscopic characterization techniques,we investigate the doping characteristics of perovskite films by remote molecules,which is corroborated by our theoretical simulations indicating Schottky defects consisting of double ions as effective charge dopants.Through a post-treatment process involving a combination of biammonium and monoammonium molecules,we create a surface layer of n-type low-dimensional perovskite.This surface layer forms a heterojunction with the underlying 3D perovskite film,resulting in a favorable doping profile that enhances carrier extraction.The fabricated device exhibits an outstanding open-circuit voltage(Voc)up to 1.34 V and achieves a certified efficiency of 19.31％for single-junction wide-bandgap(1.77 eV)perovskite solar cells,together with significantly enhanced operational stability,thanks to the improved separation of carriers.Furthermore,we demonstrate the potential of this wide-bandgap device by achieving a certified efficiency of 27.04％and a Voc of 2.12 V in a perovskite/perovskite tandem solar cell configuration.
perovskite solar cellsfield effect transistorsheterojunction
School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
Department of Modern Physics,University of Science and Technology of China,Hefei 230026,China
i-Lab,CAS Key Laboratory of Nanophotonic Materials and Devices,Suzhou Institute of Nano-Tech and Nano-Bionics,Suzhou 215123,China
Shanghai Synchrotron Radiation Facility(SSRF),Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China
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国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家重点研发计划Double First-Class Initiative Fund of Shanghai Tech UniversityShanghai Key Research ProgramShanghai Key Research Program上海市科委项目Centre for High-Resolution Electron Microscopy(ChEM)School of Physical Science and Technology(SPST)ShanghaiTech UniversityAnalytical Instrumentation Center,SPST,ShanghaiTech University
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