首页|Band-like transport in solution-processed perylene diimide dianion films with high Hall mobility

Band-like transport in solution-processed perylene diimide dianion films with high Hall mobility

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It is crucial to prepare high-mobility organic polycrystalline film through solution processing.However,the delocalized carrier transport of polycrystalline films in organic semiconductors has rarely been investigated through Hall-effect measurement.This study presents a strategy for building strong intermolecular interactions to fabricate solution-crystallized p-type perylene diimide(PDI)dianion films with a closer intermolecular π-π stacking distance of 3.25 Å.The highly delocalized carriers enable a competitive Hall mobility of 3 cm2 V-1 s-1,comparable to that of the reported high-mobility organic single crystals.The PDI dianion films exhibit a high electrical conductivity of 17 S cm-1 and typical band-like transport,as evidenced by the negative temperature linear coefficient of mobility proportional to T-3/2.This work demonstrates that,as the intermolecular π-π interactions become strong enough,they will display high mobility and conductivity,providing a new approach to developing high-mobility organic semiconductor materials.

band-like transportdianion aggregatesHall mobilitysolution-processedperylene diimide

Yanhua Jia、Qinglin Jiang、Hanlin Gan、Bohan Wang、Xiandong He、Jiadong Zhou、Zetong Ma、Jiang Zhang、Yuguang Ma

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Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640,China

Department of Physics,South China University of Technology,Guangzhou 510640,China

国家重点研发计划国家自然科学基金国家自然科学基金国家自然科学基金广东省自然科学基金Fund of the Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates,ChinaState Administration of Foreign Experts Affairs,P.R.China(SAFEA):High-End Foreign Experts Project,China

2020YFA0714604U20A600222005107522032212022A15150100632019B030301003G2022163014L

2024

10.1093/nsr/nwae087

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ISSN：
年,卷(期)：2024.11(5)
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