Dissipationless layertronics in axion insulator MnBi2Te4

扫码查看

原文链接

NETL
NSTL
万方数据

外文摘要：Surface electrons in axion insulators are endowed with a topological layer degree of freedom followed by exotic transport phenomena,e.g.,the layer Hall effect.Here,we propose that such a layer degree of freedom can be manipulated in a dissipationless way based on the antiferromagnetic MnBi2Te4 with tailored domain structure.This makes MnBi2Te4 a versatile platform to exploit the'layertronics'to encode,process and store information.Importantly,the layer filter,layer valve and layer reverser devices can be achieved using the layer-locked chiral domain wall modes.The dissipationless nature of the domain wall modes makes the performance of the layertronic devices superior to those in spintronics and valleytronics.Specifically,the layer reverser,a layer version of the Datta-Das transistor,also fills up the blank in designing the valley reverser in valleytronics.Our work sheds light on constructing new generation electronic devices with high performance and low-energy consumption in the framework of layertronics.

外文关键词：

axion insulator MnBi2Te4layertronicsantiferromagnetic domain walldissipationless transport

作者：

Shuai Li、Ming Gong、Shuguang Cheng、Hua Jiang、X.C.Xie

展开 >

作者单位：

School of Physical Science and Technology,Soochow University,Suzhou 215006,China

Institute for Advanced Study,Soochow University,Suzhou 215006,China

International Center for Quantum Materials,School of Physics,Peking University,Beijing 100871,China

Department of Physics,Northwest University,Xi'an 710069,China

Interdisciplinary Center for Theoretical Physics and Information Sciences,Fudan University,Shanghai 200433,China

Hefei National Laboratory,Hefei 230088,China

展开 >

基金：

National Key R&D Program of ChinaNational Key R&D Program of ChinaStrategic Priority Research Program of the Chinese Academy of SciencesNational Natural Science Foundation of ChinaNational Natural Science Foundation of China

项目编号：

2019YFA03084032022YFA1403700XDB280000001182240711874298

出版年：

2024

DOI：

10.1093/nsr/nwad262

国家科学评论(英文版)

CSTPCD

ISSN：

年,卷(期)：2024.11(6)