首页|B-N covalent bond-involved π-extension of multiple resonance emitters enables high-performance narrowband electroluminescence

B-N covalent bond-involved π-extension of multiple resonance emitters enables high-performance narrowband electroluminescence

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Multi-boron-embedded multiple resonance thermally activated delayed fluorescence(MR-TADF)emitters show promise for achieving both high color-purity emission and high exciton utilization efficiency.However,their development is often impeded by a limited synthetic scope and excessive molecular weights,which challenge material acquisition and organic light-emitting diode(OLED)fabrication by vacuum deposition.Herein,we put forward a B-N covalent bond-involved π-extension strategy via post-functionalization of MR frameworks,leading to the generation of high-order B/N-based motifs.The structurally and electronically extended π-system not only enhances molecular rigidity to narrow emission linewidth but also promotes reverse intersystem crossing to mitigate efficiency roll-off.As illustrated examples,ultra-narrowband sky-blue emitters(full-width at half-maximum as small as 8 nm in n-hexane)have been developed with multi-dimensional improvement in photophysical properties compared to their precursor emitters,which enables narrowband OLEDs with external quantum efficiencies(EQEmax)of up to 42.6%,in company with alleviated efficiency decline at high brightness,representing the best efficiency reported for single-host OLEDs.The success of these emitters highlights the effectiveness of our molecular design strategy for advanced MR-TADF emitters and confirms their extensive potential in high-performance optoelectronic devices.

narrowband electroluminescencethermally activated delayed fluorescence(TADF)multiple resonance emittersultra-high external quantum efficiency

Xingyu Huang、Jiahui Liu、Yulin Xu、Guohao Chen、Manli Huang、Mingxin Yu、Xialei Lv、Xiaojun Yin、Yang Zou、Jingsheng Miao、Xiaosong Cao、Chuluo Yang

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Shenzhen Key Laboratory of New Information Display and Storage Materials,College of Materials Science and Engineering,Shenzhen University,Shenzhen 518060,China

College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaShenzhen Technology and Innovation CommissionShenzhen Technology and Innovation CommissionShenzhen Technology and Innovation Commission

521303082237513052373192JCYJ20230808105603008JCYJ20220818095816036ZDSYS20210623091813040

2024

国家科学评论(英文版)

国家科学评论(英文版)

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ISSN:
年,卷(期):2024.11(6)