Ru films were deposited on SiO2/Si(100)by DC or RF magnetron sputtering at different substrate temperatures for the different deposition times.The microstructure and electrical properties of Ru films obtained under two sputtering power sources were studied by using high resolution field emission scanning electron microscope,X-ray diffractometer,atomic force microscope,four probe and so on.The results showed that the crystallization of DC-Ru films was better than that of RF-Ru films under the same sputtering conditions.Its thickness was greater than that of RF-Ru films,satisfying tDC ≈ 2tRF.With respect to the deposition rate,DC-powered deposition was faster than RF-powered one,meeting vDC ≈ 2vRF.However,DC-Ru films displayed greater resistivity than DC-Ru films,mainly due to the high density of RF-Ru films.High density is known to reduce the scattering effect of electrons on defects.
关键词
直流磁控溅射/射频磁控溅射/钌薄膜/微观结构/电阻率
Key words
DC magnetron sputtering/RF magnetron sputtering/Ru films/microstructure/resistivity
维普
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