内氧化方法制备Ag-SnO2-In2O3材料微观组织演变机理
Mechanism of microstructure evolution of Ag-SnO2-In2O3 materials prepared by internal oxidation method
郭乙麟 1许福太 2盘志雄 2刘满门 3刘天军 2谢明 4孙旭东 5霍地1
作者信息
- 1. 东北大学 材料科学与工程学院,沈阳 110819
- 2. 佛山通宝精密合金股份有限公司,广东 佛山 528000
- 3. 贵研半导体材料(云南)有限公司,昆明 650503;云南贵金属实验室有限公司,昆明 650106
- 4. 云南贵金属实验室有限公司,昆明 650106
- 5. 东北大学 材料科学与工程学院,沈阳 110819;东北大学 佛山研究生创新学院,广东 佛山 528311
- 折叠
摘要
系统研究了AgSnInNi合金内氧化法制备Ag-SnO2-In2O3-NiO电接触材料的微观组织演变机理及氧化物颗粒分布的调控.结果表明,退火工艺决定了 AgSnInNi 的缺陷状态,随退火温度的升高,合金中缺陷密度降低,内氧化速度减慢.内氧化过程中银合金同时发生回复与再结晶,但内氧化形成的SnO2和In2O3颗粒可钉扎位错、亚晶界等缺陷,抑制再结晶的发生.Ag-SnO2-In2O3-NiO合金微观组织的差异是O原子沿着缺陷向样品内部扩散与Ag合金基体发生再结晶的相互竞争的结果,这导致了芯部组织为氧化物密度较低的颗粒状分布,而外侧组织为氧化物颗粒沿着缺陷墙呈现束装聚集分布.退火工艺为 550℃/2 h、氧化工艺为 700℃/0.3 MPa×26 h时,可获得氧化物尺寸和分布一致性高的Ag-SnO2-In2O3-NiO材料.
Abstract
The mechanism of microstructure evolution and the control of oxide particle distribution of Ag-SnO2-In2O3-NiO electrical contact materials prepared by internal oxidation of AgSnInNi alloy and the control of oxide particle distribution were studied.The results show that the annealing process determines the defect state of AgSnInNi alloy.With the increase of annealing temperature,the defect density in the alloy decreases and the internal oxidation rate slows down.During the internal oxidation process,the silver alloy recovers and recrystallizes at the same time,but the SnO2 and In2O3 particles produced can pin the defects such as dislocations and sub-grain boundaries to inhibit the occurrence of recrystallization.The difference in the microstructure of Ag-SnO2-In2O3-NiO materials is the result of the competition between the diffusion of O atoms into the sample along the defects and the recrystallization of the Ag alloy matrix,which results in the internal structure with a disperse distribution of lower density,while the oxide particles on the surface of the alloy are packed and distributed along the defect wall.The Ag-SnO2-In2O3-NiO material with high consistency of oxide size and distribution can be obtained when the annealing process is 550℃/2 h and the oxidation process is 700℃/0.3 MPa×26 h.
关键词
Ag-SnO2-In2O3/电接触材料/内氧化法/退火温度/显微组织Key words
Ag-SnO2-In2O3/electrical contact material/internal oxidation method/annealing temperature/microstructure引用本文复制引用
出版年
2024
NETL
NSTL
万方数据