首页|Microsphere-assisted hyperspectral imaging:super-resolution,non-destructive metrology for semiconductor devices

Microsphere-assisted hyperspectral imaging:super-resolution,non-destructive metrology for semiconductor devices

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  • 国家科技期刊平台
  • NETL
  • NSTL
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As semiconductor devices shrink and their manufacturing processes advance,accurately measuring in-cell critical dimensions(CD)becomes increasingly crucial.Traditional test element group(TEG)measurements are becoming inadequate for representing the fine,repetitive patterns in cell blocks.Conventional non-destructive metrology technologies like optical critical dimension(OCD)are limited due to their large spot diameter of approximately 25 μm,which impedes their efficacy for detailed in-cell structural analysis.Consequently,there is a pressing need for small-spot and non-destructive metrology methods.To address this limitation,we demonstrate a microsphere-assisted hyperspectral imaging(MAHSI)system,specifically designed for small spot optical metrology with super-resolution.Utilizing microsphere-assisted super-resolution imaging,this system achieves an optical resolution of 66 nm within a field of view of 5.6 μm × 5.6 μm.This approach effectively breaks the diffraction limit,significantly enhancing the magnification of the system.The MAHSI system incorporating hyperspectral imaging with a wavelength range of 400-790 nm,enables the capture of the reflection spectrum at each camera pixel.The achieved pixel resolution,which is equivalent to the measuring spot size,is 14.4nm/pixel and the magnification is 450X.The MAHSI system enables measurement of local uniformity in critical areas like corners and edges of DRAM cell blocks,areas previously challenging to inspect with conventional OCD methods.To our knowledge,this approach represents the first global implementation of microsphere-assisted hyperspectral imaging to address the metrology challenges in complex 3D structures of semiconductor devices.

Jangryul Park、Youngsun Choi、Soonyang Kwon、Youngjun Lee、Jiwoong Kim、Jae-joon Kim、Jihye Lee、Jeongho Ahn、Hidong Kwak、Yusin Yang、Taeyong Jo、Myungjun Lee、Kwangrak Kim

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Metrology and Inspection Equipment R&D Team,Mechatronics Research,Samsung Electronics Co.,Ltd.,1-1 Samsungjeonja-ro,hwaseong-si,Gyeonggi-do 18848,Republic of Korea

Process Development Department,DRAM Process Development Team,Semiconductor R&D Center,Samsung Electronics Co.,Ltd.,1-1 Samsungjeonja-ro,hwaseong-si,Gyeonggi-do 18848,Republic of Korea

Process Development Department,Semiconductor R&D Center,Samsung Electronics Co.,Ltd.,1-1 Samsungjeonja-ro,hwaseong-si,Gyeonggi-do 18848,Republic of Korea

Mechatronics R&D Center,Samsung Electronics Co.,Ltd

2024

10.1038/s41377-024-01469-3

光:科学与应用(英文版)
中国科学院长春光学精密机械与物理研究所

光:科学与应用(英文版)

CSTPCD
ISSN：2095-5545
年,卷(期)：2024.13(6)