首页|High-power,electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si(100)heterogeneous substrate

High-power,electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si(100)heterogeneous substrate

扫码查看
原文链接
  • 国家科技期刊平台
  • NETL
  • NSTL
  • 万方数据
A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics.Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot(QD)lasers,extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult.In this study,we develop a novel photonic integration method of epitaxial growth of Ⅲ-Ⅴ on a wafer-scale InP-on-Si(100)(InPOS)heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate.This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth,namely lattice and domain mismatches.Using this approach,we achieved state-of-the-art performance of the electrically-pumped,continuous-wave(CW)1.55-μm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm-2,and output power exceeding 155 mW per facet without facet coating in CW mode.CW lasing at 120 ℃ and pulsed lasing at over 130 ℃ were achieved.This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

Jialiang Sun、Jiajie Lin、Min Zhou、Jianjun Zhang、Huiyun Liu、Tiangui You、Xin Ou

展开 >

National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,CAS,Shanghai 200050,China

Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,100049 Beijing,China

College of Information Science and Engineering,Jiaxing University,Jiaxing 314001,China

Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,100190 Beijing,China

Department of Electronic and Electrical Engineering,University College London,London WC1E 7JE,UK

展开 >

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaShanghai Rising-Star ProgramChina Postdoctoral Science FoundationZhejiang Provincial Natural Science Foundation of ChinaJiaxing Municipal Public Welfare Research Project

62293521621741671220511922QA14107002022M723282LQ23F0400022022AY10027

2024

10.1038/s41377-024-01389-2

光:科学与应用(英文版)
中国科学院长春光学精密机械与物理研究所

光:科学与应用(英文版)

CSTPCD
ISSN：2095-5545
年,卷(期)：2024.13(8)