首页|Etching-free pixel definition in InGaN green micro-LEDs
Etching-free pixel definition in InGaN green micro-LEDs
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The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage.Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage,significantly deteriorating device performance.In this study,we demonstrated a novel selective thermal oxidation(STO)method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation.Thermal annealing in ambient air oxidized and reshaped the LED structure,such as p-layers and InGaN/GaN multiple quantum wells.Simultaneously,the pixel areas beneath the pre-deposited SiO2 layer were selectively and effectively protected.It was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide,significantly reducing LED leakage current.Furthermore,applying a thicker SiO2 protective layer minimized device resistance and boosted device efficiency effectively.Utilizing the STO method,InGaN green micro-LED arrays with 50-,30-,and 10-μm pixel sizes were manufactured and characterized.The results indicated that after 4h of air annealing and with a 3.5-μm SiO2 protective layer,the 10-μm pixel array exhibited leakage currents density 1.2×10-6A/cm2 at-10 V voltage and a peak on-wafer external quantum efficiency of～6.48％.This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device efficiency.Micro-LEDs fabricated through the STO method can be applied to micro-displays,visible light communication,and optical interconnect-based memories.Almost planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with micro-LEDs.Moreover,the STO method is not limited to micro-LED fabrication and can be extended to design other Ⅲ-nitride devices,such as photodetectors,laser diodes,high-electron-mobility transistors,and Schottky barrier diodes.
Zhiyuan Liu、Yi Lu、Haicheng Cao、Glen Isaac Maciel Garcia、Tingang Liu、Xiao Tang、Na Xiao、Raul Aguileta Vazquez、Mingtao Nong、Xiaohang Li
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Advanced Semiconductor Laboratory,Electrical and Computer Engineering Program,CEMSE Division,King Abdullah University of Science and Technology(KAUST),Thuwal 23955-6900,Kingdom of Saudi Arabia
KAUST Baseline FundKAUST Competitive ResearchKAUST Competitive ResearchKAUST Nearterm Grand Challenge FundKAUST Impact Acceleration Fund
国家科技期刊平台
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