The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 107 nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field.This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth,sidewall passivation,efficient photon extraction,and elegant bonding technologies,and promises significant advantages for augmented and virtual reality devices,wearables,and next-generation consumer electronics.
Vineeth K.Bandari、Oliver G.Schmidt
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Research Center for Materials,Architectures and Integration of Nanomembranes(MAIN),Chemnitz University of Technology,Chemnitz,Germany
Material Systems for Nanoelectronics,Chemnitz University of Technology,Chemnitz,Germany
International Institute for Intelligent Nanorobots and Nanosystems(IIINN),Fudan University,Shanghai,China
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