首页|Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

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  • 国家科技期刊平台
  • NETL
  • NSTL
  • 万方数据
Owing to high pixel density and brightness,gallium nitride(GaN)based micro-light-emitting diodes(Micro-LEDs)are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display.However,Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency,resulting in reduced luminous efficiency and severe brightness non-uniformity.Here,we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers.Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate,which possesses a low dislocation density of 5.25 × 108 cm-2,small wafer bowing of 16.7 μm,and high wavelength uniformity(standard deviation STDEV＜1 nm),scalable to 6-inch sizes.Based on the high-quality GaN epilayers,green Micro-LEDs with 5 μm pixel sizes are designed with vertical non-alignment bonding technology.An atomic sidewall passivation method combined with wet treatment successfully addressed the Micro-LED sidewall damages and steadily produced nano-scale surface textures on the pixel top,which unlocked the internal quantum efficiency of the high-quality green GaN-on-Si epi-wafer.Ultra-high brightness exceeding 107cd/m2(nits)is thus achieved in the green Micro-LEDs,marking the highest reported results.Furthermore,integration of Micro-LEDs with Si-based CMOS circuits enables the realization of green Micro-LED displays with resolution up to 1080 × 780,realizing high-definition playback of movies and images.This work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.

Haifeng Wu、Xiao Lin、Qin Shuai、Youliang Zhu、Yi Fu、Xiaoqin Liao、Yazhou Wang、Yizhe Wang、Chaowei Cheng、Yong Liu、Lei Sun、Xinyi Luo、Xiaoli Zhu、Liancheng Wang、Ziwei Li、Xiao Wang、Dong Li、Anlian Pan

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Key Laboratory for Micro-Nano Physics and Technology of Hunan Province,State Key Laboratory of Chemo/Biosensing and Chemometrics,Hunan Institute of Optoelectronic Integration,College of Materials Science and Engineering,School of Physics and Electronics,Hunan University,410082 Changsha,China

Innovision Technology(Suzhou)Co.Ltd,215000 Suzhou,China

Lattice Power(Jiangxi)Corp.,330029 Nanchang,China

College of Mechanical and Electrical Engineering,Central South University,410083 Changsha,China

Beijing Digital Optical Device IC Design Co.Ltd,100015 Beijing,China

School of Physics and Electronics,Hunan Normal University,410081 Changsha,China

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2024

10.1038/s41377-024-01639-3

光:科学与应用(英文版)
中国科学院长春光学精密机械与物理研究所

光:科学与应用(英文版)

CSTPCD
ISSN：2095-5545
年,卷(期)：2024.13(12)