首页|Highly-efficient(＞70％)and Wide-spectral(400-1700 nm)sub-micron-thick InGaAs photodiodes for future high-resolution image sensors
Highly-efficient(＞70％)and Wide-spectral(400-1700 nm)sub-micron-thick InGaAs photodiodes for future high-resolution image sensors
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This paper demonstrates the novel approach of sub-micron-thick InGaAs broadband photodetectors(PDs)designed for high-resolution imaging from the visible to short-wavelength infrared(SWIR)spectrum.Conventional approaches encounter challenges such as low resolution and crosstalk issues caused by a thick absorption layer(AL).Therefore,we propose a guided-mode resonance(GMR)structure to enhance the quantum efficiency(QE)of the InGaAs PDs in the SWIR region with only sub-micron-thick AL.The TiOx/Au-based GMR structure compensates for the reduced AL thickness,achieving a remarkably high QE(＞70％)from 400 to 1700 nm with only a 0.98 μm AL InGaAs PD(defined as 1 μm AL PD).This represents a reduction in thickness by at least 2.5 times compared to previous results while maintaining a high QE.Furthermore,the rapid transit time is highly expected to result in decreased electrical crosstalk.The effectiveness of the GMR structure is evident in its ability to sustain QE even with a reduced AL thickness,simultaneously enhancing the transit time.This breakthrough offers a viable solution for high-resolution and low-noise broadband image sensors.
Dae-Myeong Geum、Jinha Lim、Junho Jang、Seungyeop Ahn、SeongKwang Kim、Joonsup Shim、Bong Ho Kim、Juhyuk Park、Woo Jin Baek、Jaeyong Jeong、SangHyeon Kim
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School of Electrical Engineering,Korea Advanced Institute of Science and Technology(KAIST),Daejeon 34141,Republic of Korea
Department of Electrical and Computer Engineering,Inha University,Incheon 22212,Republic of Korea
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