The growth and variable temperature Hall effect study of CsPbBr3 crystal
In this article,directional solidification method was used to purify the CsPbBr3 polycrystalline materi-al,and a CsPbBr3 single crystal with size of 30 mm × 70 mm was successfully grown by vertical Bridgman method.The test results of the purified polycrystalline using ICP-OES showed that the impurity content in the purified polycrystalline CsPbBr3 decreased by 28.7％.Analysis of the wafer obtained after cutting using XRD and EDS revealed that the crystal plane direction of the wafer belonged to the {210} crystal plane group,and the Cs,Pb,and Br elements were uniformly distributed in the crystal,with atomic percentages that met the stoi-chiometric ratio.FTIR and UV-visible spectrophotometers were used to measure the transmittance of the crys-tal.The results showed that the infrared transmittance of the grown crystal exceeded 75％in the range of 500/cm to 4000/cm.The UV short-wave cutoff edge was 552 nm,corresponding to bandgap energy of 2.246 eV.Seven different temperature points were selected to test variable temperature Hall effect of the CsPbBr3 single crystal.The results showed that the grown crystal was a P-type conductor.The main scattering mechanisms of charge carriers in the temperature range of 250 K to 300 K and 300 K to 350 K were acoustic wave scattering and ionized impurity scattering,respectively.In the temperature range of 150 K to 250 K,the scattering mechanism was more consistent with a combination of multiple scattering mechanisms.By further fitting the relationship between the carrier concentration p and 1/T,the ionized energy of impurities in the crystal was calculated to beΔEA=0.3042 eV.
crystal growthCsPbBr3 single crystalvertical Bridgman methodvariable temperature Hallscatter-ing mechanism
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