氧化亚锡/聚酰亚胺复合薄膜制备及介电性能研究
Preparation and dielectric properties of stannous oxide/polyimide composite films
李科 1杨林 1杨麟 1杜娟 1李新跃1
作者信息
- 1. 四川轻化工大学材料科学与工程学院,四川 自贡 643000
- 折叠
摘要
采用水热法合成了氧化亚锡(SnO),然后再通过原位聚合法将合成的SnO引入到聚酰亚胺基体中,制得SnO/PI复合薄膜.SnO的含量对该薄膜的介电常数、介电损耗、拉伸强度和击穿强度具有显著影响.当SnO含量为10％(质量分数)时,SnO/PI复合薄膜的介电常数高达456,介电损耗仅为0.034,拉伸强度为65 MPa,击穿强度为146.9 MV/m.将SnO引入到PI基体中能改善PI薄膜的介电性能,使其在储能、航空航天、绝缘等领域有很好的应用前景.
Abstract
In this paper,stannous oxide(SnO)was synthesized by hydrothermal method,and then the obtained SnO was introduced into polyimide matrix by in-situ polymerization method to prepare SnO/PI composite films.The contents of SnO have significant influence on the dielectric constant,dielectric loss,tensile strength and breakdown strength of the film.When the contents of SnO was 10wt％,the dielectric constant of the SnO/PI composite film was as high as 456,the dielectric loss was only 0.034,the tensile strength was 65 MPa,and the breakdown strength was 146.9 MV/m,respectively.The introduction of SnO into PI could greatly improve the dielectric properties of the composite PI films,so that it has a good application prospect in energy storage,aero-space,insulation and other fields.
关键词
聚酰亚胺/复合薄膜/氧化亚锡/介电性能/介电损耗Key words
polyimide/composite film/tin oxide/dielectric properties/dielectric loss引用本文复制引用
基金项目
四川省科技计划(2022ZHCG0078)
出版年
2024
NETL
NSTL
万方数据