首页|氧化亚锡/聚酰亚胺复合薄膜制备及介电性能研究

氧化亚锡/聚酰亚胺复合薄膜制备及介电性能研究

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采用水热法合成了氧化亚锡(SnO),然后再通过原位聚合法将合成的SnO引入到聚酰亚胺基体中,制得SnO/PI复合薄膜.SnO的含量对该薄膜的介电常数、介电损耗、拉伸强度和击穿强度具有显著影响.当SnO含量为10%(质量分数)时,SnO/PI复合薄膜的介电常数高达456,介电损耗仅为0.034,拉伸强度为65 MPa,击穿强度为146.9 MV/m.将SnO引入到PI基体中能改善PI薄膜的介电性能,使其在储能、航空航天、绝缘等领域有很好的应用前景.
Preparation and dielectric properties of stannous oxide/polyimide composite films
In this paper,stannous oxide(SnO)was synthesized by hydrothermal method,and then the obtained SnO was introduced into polyimide matrix by in-situ polymerization method to prepare SnO/PI composite films.The contents of SnO have significant influence on the dielectric constant,dielectric loss,tensile strength and breakdown strength of the film.When the contents of SnO was 10wt%,the dielectric constant of the SnO/PI composite film was as high as 456,the dielectric loss was only 0.034,the tensile strength was 65 MPa,and the breakdown strength was 146.9 MV/m,respectively.The introduction of SnO into PI could greatly improve the dielectric properties of the composite PI films,so that it has a good application prospect in energy storage,aero-space,insulation and other fields.

polyimidecomposite filmtin oxidedielectric propertiesdielectric loss

李科、杨林、杨麟、杜娟、李新跃

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四川轻化工大学材料科学与工程学院,四川 自贡 643000

聚酰亚胺 复合薄膜 氧化亚锡 介电性能 介电损耗

四川省科技计划

2022ZHCG0078

2024

功能材料
重庆材料研究院 中国仪器仪表学会仪表材料学会

功能材料

CSTPCD北大核心
影响因子:0.918
ISSN:1001-9731
年,卷(期):2024.55(5)