首页|Ni掺杂提升MoS2的助催化活性用于ZnIn2S4光催化产氢及有毒Cr(Ⅵ)还原

Ni掺杂提升MoS2的助催化活性用于ZnIn2S4光催化产氢及有毒Cr(Ⅵ)还原

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过渡金属硫化物MoS2吸附H+的吉布斯自由能接近于零,被认为是一种很有前途的产氢助催化剂.然而,MoS2助催化剂的活性位点暴露有限,极大的限制了其活性.以Ni-BDC微球作为Ni源和模板,通过水热法成功合成了镍掺杂的Ni-MoS2助催化剂.该助催化剂可以明显的提高ZnIn2S4的光催化析氢活性活性,经过优化后的光催化剂(表示为NMS/ZIS-10)的氢气释放速率最高,达到4.17 mmol·g-1·h-1,分别是纯ZnIn2S4和MoS2/ZnIn2S4光催化剂的12.26倍和2.72倍.此外,NMS/ZIS-10还表现出电荷分离促进的毒性Cr(Ⅵ)还原活性.实验数据表明,Ni-MoS2/ZnIn2S4优异的光催化性能主要源于其Ni掺杂引起的活性位点的增加、光吸收能力的增强、电荷载流子分离的提升以及电子寿命的延长.研究结果为优化设计高性能Mo基助催化剂提供了有价值的参考.
Ni doping to improve the cocatalytic activity of MoS2 cocatalyst for ZnIn2S4 photocatalytic H2 production and toxic Cr(Ⅵ)reduction
The Gibbs free energy of H+adsorption on transition metal sulfide MoS2 is close to zero,considered to be a promising cocatalyst for hydrogen production.However,the limited exposure of the active sites of MoS2 cocatalyst limits the activity.In this work,Ni-BDC microspheres was chosen as Ni sources and templates to synthesize nickel doped MoS2 cocatalyst via a hydrothermal method.The cocatalyst can significantly improve the photocatalytic hydrogen evolution activity of ZnIn2S4.The optimized photocatalyst(labelled as NMS/ZIS-10)exhibits the highest hydrogen evolution rate of 4.17 mmol/(g·h),which is 12.26 times and 2.72 times of pure ZnIn2S4 and MoS2/ZnIn2S4 photocatalysts,respectively.In addition,NMS/ZIS-10 also exhibits significantly en-hanced toxic Cr(Ⅵ)reduction activity due to the promoted charge separation.The excellent photocatalytic per-formance of Ni-MoS2/ZnIn2S4 is mainly due to the increase of active sites caused by Ni doping,the enhancement of light absorption ability,the improvement of charge carrier separation,and the extension of electronic life-time.The results of this study provide valuable references for optimizing the design of high-performance Mo based co catalysts.

ZnIn2S4MoS2dopingphotocatalystCr(Ⅵ)reductionH2 generation

陈文轩、乔秀清、李晨、王紫昭、侯东芳、孙博婧、李东升

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三峡大学材料与化工学院,无机非金属晶态与能源转换材料重点实验室,湖北宜昌 443002

湖北三峡实验室,湖北宜昌 443007

ZnIn2S4 MoS2 掺杂 光催化剂 Cr(Ⅵ)还原 产氢

国家自然科学基金国家自然科学基金国家自然科学基金国家级111引智基地项目

219711432180516522371165D20015

2024

功能材料
重庆材料研究院 中国仪器仪表学会仪表材料学会

功能材料

CSTPCD北大核心
影响因子:0.918
ISSN:1001-9731
年,卷(期):2024.55(5)