首页|B、Cu共掺杂单层g-C3N4电子结构及光学性质的第一性原理研究

B、Cu共掺杂单层g-C3N4电子结构及光学性质的第一性原理研究

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g-C3N4是一种极具潜力的绿色半导体光催化剂,但其带隙较宽,对可见光利用率有限.通过元素掺杂可以有效提高g-C3N4的光催化性能,采用第一性原理方法研究了非金属元素B和金属元素Cu共掺杂对g-C3N4电子结构于光学性质的影响机理,结果表明,B、Cu共掺杂g-C3N4(001)表面的最稳定位点为B占据H位点,而Cu占据N2位点.B、Cu共掺杂相比单一 B元素掺杂可以使g-C3N4(001)表面的能隙和功函数进一步下降,Cu元素的加入主要改善了 B掺杂的g-C3N4(001)表面的电子导通能力以及对光的捕捉能力,从而提高了光催化活性.
First principles study on the electronic structure and optical properties of B and Cu co-doped monolayer g-C3N4
g-C3N4 is a highly promising green semiconductor photocatalyst,but its bandgap is wide and its utili-zation efficiency for visible light is limited.The photocatalytic performance of g-C3N4 can be effectively im-proved through element doping.This paper uses first principles methods to study the mechanism of the influ-ence of non-metallic element B and metallic element Cu co doping on the electronic structure and optical proper-ties of g-C3N4.The results indicate that the most stable localization point for B,Cu co-dopped g-C3N4(001)sur-face is that B occupies the H site,while Cu occupies the N2 site.B.Compared with single B element doping,co doping with Cu can further reduce the energy gap and work function of g-C3N4(001)surface.The addition of Cu mainly improves the electronic conductivity and light capture ability of B-doped g-C3N4(001)surface,thereby enhancing photocatalytic activity.

g-C3N4photocatalysisfirst-principleselectronic structureoptical properties

谭秀娟、张旭阳、杨烁、王勇、张旭昀

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东北石油大学机械科学与工程学院,黑龙江大庆 163000

东北轻合金有限责任公司,哈尔滨 150060

中国航发哈尔滨东安发动机有限公司,哈尔滨 150066

g-C3N4 光催化 第一性原理 电子结构 光学性质

黑龙江省自然科学基金项目国家自然科学基金项目

LH2023E01651974091

2024

功能材料
重庆材料研究院 中国仪器仪表学会仪表材料学会

功能材料

CSTPCD北大核心
影响因子:0.918
ISSN:1001-9731
年,卷(期):2024.55(7)