Preparation and the effect on optical-electrical properties of tantalum doped FTO film
To improve the optical,electrical,and low-radiation performance of FTO thin films,in this paper,tantalum doped FTO(TFTO)films were successfully prepared on soda-calcium glass by aerosol assisted chemical vapor deposition(AACVD).The monobutyl tin chloride(MBTC)was used as tin source,ammonium fluoride(NH4F)as fluorine source,methanol as solvent,tantalum pentachloride(TaCl5)as tantalum source and sodium-calcium glass as base.The phase composition,micro-morphology,optical properties,electrical properties,and low radiation properties of the films were analyzed using X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM),X-ray photoelec-tron spectroscopy(XPS),a spectrophotometer,and a Hall effect tester.The results show that TFTO(SnO2∶F,Ta)has a tetragonal rutile structure and is an N-type semiconductor.When Ta/Sn atomic ratio is 1％,the visible transmit-tance T is 74.18％,the resistivity p is 2.78X 10-4 Ω·cm,the carrier concentration n is 1.44X 1021/cm3,the mobility u is 18.73 cm2/(V·s),the infrared reflectance R IR is 94％,and the emissivity e is 0.12.Tantalum doping can effective-ly improve the electrical properties,carrier concentration and infrared reflectance of FTO films,and has a low effect on visible transmittance.
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