Preparation and thermoelectric properties of antimony telluride based composite thermoelectric materials
Taking Sb2Te3 as the research object,BixSb2-xTe3 powder was prepared by hydrothermal method by doping Bi element,and BixSb2-xTe3 thin film was prepared by high vacuum thermal evaporation coating method on a glass slide substrate.The lattice structure,microstructure and elemental composition of BixSb2-xTe3 thin films were studied using XRD,SEM,EDS,XPS,etc.The influence of Bi proportion on the thermoelectric properties of BixSb2-xTe3 thin films was tested using the electrical performance testing system ZEM-3.The re-sults showed that BixSb2-xTe3 had a diamond shaped structure,with irregular morphology of particles and lay-ers.After doping with Bi3+,it would replace the position of Sb3+.The conductivity of BixSb2-xTe3 film showed a trend of first decreasing and then slightly increasing with the increase of temperature.With the increased of Bi doping amount,the conductivity of BixSb2-xTe3 film first increased and then decreased,and the Seebeck coeffi-cient continued to increase.At 300 K,the highest conductivity of Bi0.4Sb1.6Te3 film was 3 015 S/cm.The total thermal conductivity of BixSb2-xTe3 thin film first decreased and then increased with the increase of tempera-ture,and continuously decreased with the increase of Bi doping amount.The highest thermal conductivity of Sb2Te3 at 300 K was 1.61 W/(m·K).,the power factor of BixSb2-xTe3 thin film first increased and then de-creased.The power factor of Bi0.4Sb1.6Te3 thin film reached its maximum value of 16.2 μW/(cm·K2)at 300 K,indicated that Bi0.4Sb1.6Te3 composite thermoelectric material can generate a larger thermoelectric voltage and a-chieve higher thermoelectric conversion efficiency under a given temperature difference.
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