Transition metal dichalcogenides(TMDCs),represented by MoS2,are ideal candidates for the development of next-generation high-performance optoelectronic devices due to their unique electronic structure,excellent semiconductor properties,tunable band gap(1.3-1.8 eV),high mobility and strong photo-electric interactions.However,the unique interlayer van der Waals gap of 2D materials makes it impossible to achieve uniform and stable doping by conventional semiconductor doping methods,such as diffusion and injection,and cannot effectively modulate the performance of their associated electronic de-vices.The traditional"3D"semiconductor-based p-n junction is the fundamental blocks of modern elec-tronic devices,integrating 2D layered MoS2 into conventional semiconductor materials has become one of the strategies to enhance device performance and explore new functionalities.The semiconductor ZnO,with 3.37eV bandgap and superior optoelectronic properties,has been widely used in high efficiency short wavelength detection,light emitting and laser devices as well as smart devices.In recent years,the study of heterojunction structures with MoS2 and ZnO has become an attractive topic,and many studies have been reported that the MoS2/ZnO heterostructures can effectively improve the photoresponsivity,re-sponse range and response speed of photodetectors,demonstrating good performance.This paper reviews various methods of preparing MoS2/ZnO heterojunction structures,physical mechanisms of carries trans-port at the heterojunction interfaces,and the research progress in photodetectors.
MoS2ZnOVan Der Waals HeterostructureInterfacial TransportPhotodetector
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