Investigation of tin-doping effect on the microstructure and photo detection of zinc oxide nanorod arrays
A series of Zn1-xSnxO(x=0.01-0.07)nanopillar samples were prepared on N-type heavily doped substrates by the sol gel method with different concentrations of Sn,and annealed at different tem-peratures(500 ℃,600 ℃,700 ℃).The photoelectric performance of the sample was characterized using light/dark current testing,and it was found that when the bias voltage was 5V,the sample with x=0.04 exhibited the best light/dark current change ratio(600％)after annealing at 600 ℃ for 1 hour.The XRD and FE-SEM results show that the nanopillar sample has the maximum length and good crystallinity,indicating that the sample has a higher crystalline quality.PL testing found that the defect concentration of the sample was the smallest at x=0.04,indicating that at this defect concentration,tin replaced zinc and produced more charge carriers,resulting in optimal optoelectronic performance.
万方数据
维普
