Effects of orientation of substrate on the enhanced low-dose-rate sensitivity （ELDRS） in NPN transistors
Effects of orientation of substrate on the enhanced low-dose-rate sensitivity （ELDRS） in NPN transistors
Abstract
The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types o
关键词
NPN晶体管/低剂量率/增强型/灵敏度/基质/实验现象/集电极电流/退火特性Key words
NPN bipolar junction transistors/60Co-γ irradiation/ELDRS/orientation of substrate引用本文复制引用
出版年
2011
NETL
NSTL
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