首页|Effects of orientation of substrate on the enhanced low-dose-rate sensitivity （ELDRS） in NPN transistors

Effects of orientation of substrate on the enhanced low-dose-rate sensitivity （ELDRS） in NPN transistors

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The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types o

NPN bipolar junction transistors60Co-γ irradiationELDRSorientation of substrate

NPN晶体管 低剂量率 增强型 灵敏度 基质 实验现象 集电极电流 退火特性

2011

高能物理与核物理
中国物理学会

高能物理与核物理

SCI
ISSN：0254-3052
年,卷(期)：2011.35(2)
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