Radiation induced inter-device leakage degradation
Radiation induced inter-device leakage degradation
Abstract
The evolution of inter-device leakage generation technologies is studied with an N-type current with total ionizing dose in transistors in 180 nm poly-gate field device （PFD） that uses the shallow trench isolation as an effective gate oxide. The overall r
关键词
设备泄漏/辐射诱发/计算机辅助设计技术/NMOS晶体管/退化/电离总剂量/纳米晶体管/发电技术Key words
total ionizing dose/shallow trench isolation/PFD device/2-D simulation引用本文复制引用
出版年
2011
NETL
NSTL
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