The modulation of the contact type and Schottky barrier of V2NO2/TiSi2N4heterostructures by an applied electric field is investigated using first principles calculations.The results show that the external electric field can effectively regulate the height of the V2NO2/TiSi2N4 Schottky barrier and the contact type of the heterojunction.Both positive and negative external electric fields can achieve the dynamic transition between p-type and n-type Schottky contacts in the V2NO2/TiSi2N4 heterostructure.This work provides a theoretical basis for the application of Schottky functional devices and field-effect transistors based on TiSi2N4 semiconductors.
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