GaAs基共振遂穿二极管的材料结构研究
The Material Structure Research of the GaAs-based Resonant Tunneling Diode
王杰 1张斌珍 1刘君 1唐建军 1谭振新 1贾晓娟 1高杰1
作者信息
- 1. 电子测试技术国家重点实验室,仪器科学与动态测试教育部重点实验室,中北大学,太原,030051
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摘要
用分子束外延技术在半绝缘GaAs衬底上生长了三种不同材料结构的RTD.主要针对阱结构进行了对比设计,然后对设计结构进行了常温下的I-V特性测试,测试结果中器件的PVCR值最高达到了6,V<,p>降低到了0.41 V.同时常温下测试了其中一种设计结构的敏感单元在四种不同发射极面积下的I-V特性曲线.最后对器件阱结构和发射极面积大小与器件直流特性的关系进行了分析总结,为设计性能更好的RTD结构提供了参考依据.
Abstract
RTDs of three different material structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. We mainly proceed contrast design aim at well structure.Then tested the I-V character of the designed structure. In the test result, the PVCR of the device is up to 6, Vp is reduced to 0.41 V. And we tested one of the designed structuret's I-V curve under four different emitter area of sensitive cell, finally analyed and summarized the relation-ship between the well structure of the device and emitter area of sensitive cell with the DC character of the device, which provided a reference for the better performance of the RTD structure design.
关键词
共振隧穿二极管/I-V特性/砷化镓/发射极Key words
resonant tunneling diodes/I-V characteristic/GaAs/emitter引用本文复制引用
基金项目
国家自然科学基金重点项目(50730009)
出版年
2011
NETL
NSTL
维普
万方数据