首页|Analysis of Piezoelectric Semiconductor Structures Considering Both Physical and Geometric Nonlinearities

Analysis of Piezoelectric Semiconductor Structures Considering Both Physical and Geometric Nonlinearities

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Piezoelectric semiconductors(PSs),such as ZnO and GaN,known as the third-generation semiconductors,have promising applications in electronic and optoelectronic devices due to the coexistence and interaction of piezoelectricity and semicon-ductor properties.Theoretical modeling of PS structures under external loads,such as thermal and mechanical loads,plays a crucial role in the design of PS devices.In this work,we propose a nonlinear fully coupling theoretical model and investi-gate the multi-field coupling behaviors of PS structures and PN junctions under thermal and mechanical loads,considering physical and geometric nonlinearities.The electromechanical and semiconducting behaviors of a PS rod-like structure with flexural deformations under different combinations of temperature changes and mechanical loads are evaluated.The tuning effect of temperature changes and mechanical loads on multi-field coupling behaviors of PSs is revealed.The current-voltage characteristics of PS PN junctions are studied under different combinations of temperature changes and mechanical loads.The obtained results are helpful for the development of novel PS devices.

Piezoelectric semiconductorNonlinearityMulti-field CouplingTuning

Zhengguang Xiao、Shuangpeng Li、Chunli Zhang

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Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province,Department of Engineering Mechanics,Zhejiang University,Hangzhou 310027,China

Huanjiang Laboratory,Zhuji 311816,China

National Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Zhejiang province,Chinaspecialized research projects of Huanjiang Laboratory

2020YFA07117001217232611972139LR21A020002

2024

10.1007/s10338-023-00448-2

固体力学学报(英文版)
中国力学学会

固体力学学报(英文版)

EI
影响因子：0.214
ISSN：0894-9166
年,卷(期)：2024.37(1)
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