To achieve high-performance,low-cost zinc oxide(ZnO)-based ultraviolet photodetectors,uti-lizing Ga-doped ZnO(ZnO:Ga)as the photosensitive layer is key.This study synthesized ZnO:Ga microro-ds with varying Ga doping concentrations(0%[undoped ZnO],0.5%,1%,2%,and 4%)using a straightforward hydrothermal method.The atomic ratios of Ga to Zn were meticulously adjusted.Initial analyses revealed that all samples possessed the hexagonal wurtzite ZnO structure,as confirmed by X-ray diffractometry(XRD).Scanning electron microscopy(SEM)showed that the microrods maintained a con-sistent rod-like morphology.Subsequently,these microrods were applied to fluorine-doped tin oxide(FTO)glass substrates with interdigital patterns to construct five ultraviolet photodetectors.Their perfor-mance was thoroughly evaluated,demonstrating that all devices efficiently responded to 365 nm light.No-tably,the photodetector with 1%Ga-doped ZnO microrods achieved superior performance,delivering a responsivity of 13.13 A/W,a gain of 44.63,and a specific detectivity of 3.31×1012 Jones at 365 nm.Its re-sponse and decay times were recorded at 12.3 s and 36.4 s,respectively.These findings suggest that an op-timal Ga concentration can significantly enhance the performance of ZnO-based ultraviolet photodetectors.This research contributes valuable insights for the development of advanced ultraviolet photodetectors and related devices utilizing ZnO:Ga materials.
维普
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