首页|Ga掺杂ZnO微米棒紫外光探测器的制备与特性

Ga掺杂ZnO微米棒紫外光探测器的制备与特性

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为了获得高性能和低成本的氧化锌(ZnO)基紫外光探测器,使用Ga掺杂ZnO(ZnO∶Ga)作为光敏层,采用水热法合成了不同Ga掺杂浓度ZnO∶Ga微米棒,Ga与Zn的原子比分别为0%(未掺杂),0.5%,1%,2%和4%.使用X射线衍射仪(XRD)测试所有样品的晶体结构,发现它们都为六方纤锌矿结构的ZnO.采用扫描电子显微镜(SEM)观察它们的形貌,都呈现棒状结构.进一步,制备叉指图案氟掺杂的氧化锡(FTO)导电玻璃基底,将不同Ga掺杂浓度ZnO∶Ga微米棒分别涂覆在FTO上,得到5种简单结构的紫外光探测器,系统研究了它们的性能.结果表明:所有ZnO∶Ga微米棒紫外光探测器对365 nm紫外光表现出良好的响应.其中,1%Ga掺杂ZnO∶Ga微米棒紫外光探测器性能最佳,经计算,在365 nm波长处,它的响应度、增益和比探测率分别为13.13 A/W(5 V),44.63(5 V),3.31×1012 Jones,响应时间和衰减时间分别为12.3 s和36.4 s.说明在ZnO微米棒中进行合适Ga掺杂能有效提高紫外光探测器的性能.该研究有助于基于ZnO∶Ga材料的紫外光探测器及相关器件发展.
Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors
To achieve high-performance,low-cost zinc oxide(ZnO)-based ultraviolet photodetectors,uti-lizing Ga-doped ZnO(ZnO:Ga)as the photosensitive layer is key.This study synthesized ZnO:Ga microro-ds with varying Ga doping concentrations(0%[undoped ZnO],0.5%,1%,2%,and 4%)using a straightforward hydrothermal method.The atomic ratios of Ga to Zn were meticulously adjusted.Initial analyses revealed that all samples possessed the hexagonal wurtzite ZnO structure,as confirmed by X-ray diffractometry(XRD).Scanning electron microscopy(SEM)showed that the microrods maintained a con-sistent rod-like morphology.Subsequently,these microrods were applied to fluorine-doped tin oxide(FTO)glass substrates with interdigital patterns to construct five ultraviolet photodetectors.Their perfor-mance was thoroughly evaluated,demonstrating that all devices efficiently responded to 365 nm light.No-tably,the photodetector with 1%Ga-doped ZnO microrods achieved superior performance,delivering a responsivity of 13.13 A/W,a gain of 44.63,and a specific detectivity of 3.31×1012 Jones at 365 nm.Its re-sponse and decay times were recorded at 12.3 s and 36.4 s,respectively.These findings suggest that an op-timal Ga concentration can significantly enhance the performance of ZnO-based ultraviolet photodetectors.This research contributes valuable insights for the development of advanced ultraviolet photodetectors and related devices utilizing ZnO:Ga materials.

ultraviolet photodetectorGa-doped ZnOmicrorodshydrothermal methodresponsivity

袁兆林、吴永炜、余璐瑶、何剑锋、徐能昌、汪雪元、路鹏飞

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东华理工大学 信息工程学院,江西 南昌 330013

东华理工大学 软件学院,江西 南昌 330013

江西省核地学数据科学与系统工程技术研究中心,江西 南昌 330013

紫外光探测器 镓掺杂氧化锌 微米棒 水热法 响应度

国家自然科学基金江西省自然科学基金江西省核地学数据科学与系统工程技术研究中心开放基金东华理工大学博士科研启动基金江西省研究生创新研究基金江西省研究生创新研究基金

1186500220212BAB201003JETRCNGDSS202209DHBK2019214YC2021-S624YC2023-S591

2024

10.37188/OPE.20243205.0643

光学精密工程
中国科学院长春光学精密机械与物理研究所 中国仪器仪表学会

光学精密工程

CSTPCD北大核心
影响因子：2.059
ISSN：1004-924X
年,卷(期)：2024.32(5)
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